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Specific Process Knowledge/Characterization/Element analysis: Difference between revisions

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[[image:EDX-scheme.jpg|250x250px|right|thumb|The high energy electrons in the beam (denoted above as incident particle) collide with the core electrons of the sample atoms that are left in an excited state with higher energy. One decay mechanism is to let an outer electron fall into the unoccupied state under emission of a photon that carries the excess energy. This energy is determined by the electronic shells and hence characteristic of the atom.]]
You can make detailed analysis on the elemental composition and distribution in a sample with 3 instruments at Danchip. The [[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy/Leo|Leo SEM]] and [[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy/FEI|FEI SEM]] are both equipped with an X-ray detector that allows you to make elemental analysis by using the technique Energy Dispersive X-ray analysis or EDX. The [[Specific Process Knowledge/Characterization/SIMS: Secondary Ion Mass Spectrometry|Atomika SIMS]] uses a technique called Secondary Ion Mass Spectrometry or SIMS.
You can make detailed analysis on the elemental composition and distribution in a sample with 3 instruments at Danchip. The [[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy/Leo|Leo SEM]] and [[Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy/FEI|FEI SEM]] are both equipped with an X-ray detector that allows you to make elemental analysis by using the technique Energy Dispersive X-ray analysis or EDX. The [[Specific Process Knowledge/Characterization/SIMS: Secondary Ion Mass Spectrometry|Atomika SIMS]] uses a technique called Secondary Ion Mass Spectrometry or SIMS.


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== Secondary Ion Mass Spectrometry ==
== Secondary Ion Mass Spectrometry ==
[[image:SIMScascade.gif|250x250px|right|thumb|A beam of high energy ions is rastered on the surface of the sample. Some of the atoms that used to make up the surface are sputtered off and emitted as secondary ions. The mass of the these ions is measured with a mass spectrometer.]]


In the Atomika SIMS the samples are bombarded with a beam of either oxygen or caesium ions. When accelerated to high energy and rastered across the sample
In the Atomika SIMS the samples are bombarded with a beam of either oxygen or caesium ions. When accelerated to high energy and rastered across the sample
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