Specific Process Knowledge/Thin film deposition/Deposition of Copper: Difference between revisions

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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])


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|-  
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! General description
! General description
|E-beam deposition of Cu
|E-beam deposition of Cu
|Sputter deposition of Cu
|Sputter deposition of Cu
|Sputter deposition of Cu


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!Pre-clean
!Pre-clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
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!Layer thickness
!Layer thickness
|10Å to 0.5µm*
|10Å to 0.5µm*
|
|10Å to 1µm*
10Å to 1µm*  
|10Å to 1µm*  


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|-
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Depending on [[Specific Process Knowledge/Thin film deposition/Multisource PVD/Cu|process parameters]]
Depending on [[Specific Process Knowledge/Thin film deposition/Multisource PVD/Cu|process parameters]]
| ~1Å/s
|-
|-


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* 12x4" wafers or  
* 12x4" wafers or  
* 12x2" wafers  
* 12x2" wafers  
|
*smaller pieces
*Up to 1x6" wafers
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|-


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* SU-8  
* SU-8  
* Metals  
* Metals  
| almost any
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Comment
! Comment
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Revision as of 13:42, 13 October 2014

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Deposition of Cu

Copper can be deposited by e-beam evaporation or sputtering . In the chart below you can compare the different deposition equipment.


Deposition of Copper using sputter deposition technique


E-beam evaporation (Alcatel) Sputter deposition (PVD co-sputter/evaporation) Sputter deposition (Lesker)
General description E-beam deposition of Cu Sputter deposition of Cu Sputter deposition of Cu
Pre-clean RF Ar clean RF Ar clean RF Ar clean
Layer thickness 10Å to 0.5µm* 10Å to 1µm* 10Å to 1µm*
Deposition rate 2Å/s to 15Å/s

Depending on process parameters

~1Å/s
Batch size
  • Up to 1x4" wafers
  • smaller pieces
  • 4x6" wafers or
  • 12x4" wafers or
  • 12x2" wafers
  • smaller pieces
  • Up to 1x6" wafers
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
  • Silicon
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
almost any
Comment

* To deposit layers thicker then 200 nm permission is required (contact Thin film group)

Studies of Cu deposition processes

Roughness of Cu layers - Roughness of Cu layers deposited with Alcatel