Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing: Difference between revisions
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=Standard Processes= | =Standard Processes= | ||
== | ==Puddle development== | ||
Spin coating of AZ MiR 701 (29cps) on Spin Track 1 is divided into two or three steps: HMDS priming (optional), spin coating, and soft baking. At the moment, the HMDS priming is equal to the standard priming, but this may be subject to change as our process knowledge grows. Spin coating uses dynamic dispence of 4 ml resist at 800 rpm, followed by spin-off at a thickness dependent spin speed for a thickness dependent time. The wafer is deaccelerated at 1000 rpm/s for 5 seconds before stopping. Soft baking is done at 90°C for 60s. As MiR 701 has a tendency to produce "cotton candy" on the edges, soft baking is performed in 1 mm proximity. | Spin coating of AZ MiR 701 (29cps) on Spin Track 1 is divided into two or three steps: HMDS priming (optional), spin coating, and soft baking. At the moment, the HMDS priming is equal to the standard priming, but this may be subject to change as our process knowledge grows. Spin coating uses dynamic dispence of 4 ml resist at 800 rpm, followed by spin-off at a thickness dependent spin speed for a thickness dependent time. The wafer is deaccelerated at 1000 rpm/s for 5 seconds before stopping. Soft baking is done at 90°C for 60s. As MiR 701 has a tendency to produce "cotton candy" on the edges, soft baking is performed in 1 mm proximity. | ||
| Line 51: | Line 51: | ||
|1.053 | |1.053 | ||
|0.33% | |0.33% | ||
|5/9 2013 | |5/9 2013 | ||
|taran | |taran | ||
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*'''T2 5214E image reversal bake''' | *'''T2 5214E image reversal bake''' | ||
Process parameters: 100s contact bake at 110°C. | Process parameters: 100s contact bake at 110°C. | ||
==Combined PEB and development== | |||
Revision as of 08:46, 10 October 2014
This page is under construction 
General Process Information
Processing using Spin Track 1 + 2 is divided into three parts:
- HMDS priming
- Spin coating
- Soft baking
As part of the processing of negative tone resists and chemically amplified positive tone resists, Spin Track 2 may also be used for:
- Post-exposure baking (at 110°C)
Features of Spin Track 1 + 2:
- Cassette-to-cassette wafer handling
- In-line HMDS priming
- Temperature controlled resist lines
The resist lines are temperature controlled using 25°C water from a chiller. The priming module coolplate is cooled by the same chiller. If the process flow has been properly designed, the wafer and resist should have the same temperature during spin coating, ensuring good coating reproducibility.
Puddle Development
The process of development
Rinse
Post-exposure baking
Chemically amplified resists and cross-linking negative resists must be baked after exposure in order to finish the process initiated by the exposure light. Post-exposure bake, or PEB, can be carried out as a contact bake or a proximity bake. In a contact bake, the wafer is held in close contact to the hotplate surface by vacuum during the bake. In a proximity bake, the wafer is first moved into close proximity, e.g. 1mm, of the hotplate surface, then held there for the duration of the bake. Since the hotplate temperatures of Spin Track 1 + 2 are fixed, PEB is only possible at 90°C or 110°C. In practice, only 110°C (Spin Track 2) is used. After baking, the wafer is cooled for 5 seconds on the coolplate.
Standard Processes
Puddle development
Spin coating of AZ MiR 701 (29cps) on Spin Track 1 is divided into two or three steps: HMDS priming (optional), spin coating, and soft baking. At the moment, the HMDS priming is equal to the standard priming, but this may be subject to change as our process knowledge grows. Spin coating uses dynamic dispence of 4 ml resist at 800 rpm, followed by spin-off at a thickness dependent spin speed for a thickness dependent time. The wafer is deaccelerated at 1000 rpm/s for 5 seconds before stopping. Soft baking is done at 90°C for 60s. As MiR 701 has a tendency to produce "cotton candy" on the edges, soft baking is performed in 1 mm proximity.
Flow names, process parameters, and test results:
- T1 MiR 701 1um no HMDS
- T1 MiR 701 1um with HMDS
Spin-off: 60 s at 9990 rpm.
| Substrate | Thickness | Uniformity (+/-) | Test date | Tester initials | Comments |
|---|---|---|---|---|---|
| Silicon with native oxide | 1.053 | 0.33% | 5/9 2013 | taran | with HMDS. Average of 3 wafers |
Post-exposure baking (PEB)
Chemically amplified resists and cross-linking negative resists must be baked after exposure in order to finish the process initiated by the exposure light.
Flow names and process parameters:
- T2 5214E image reversal bake
Process parameters: 100s contact bake at 110°C.