Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing: Difference between revisions

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 ==Post-exposure baking==
-Negative resists and chemically amplified positive resists must be baked after exposure in order to finish the process initiated by the exposure light. Post-exposure bake, or PEB, can be carried out as a contact bake or a proximity bake. In a contact bake, the wafer is held in close contact to the hotplate surface by vacuum during the bake. In a proximity bake, the wafer is first moved into close proximity, e.g. 1mm, of the hotplate surface, then held there for the duration of the bake. Since the hotplate temperatures of Spin Track 1 + 2 are fixed, PEB is only possible at 90°C or 110°C. In practice, only 110°C (Spin Track 2) is used. After baking, the wafer is cooled for 5 seconds on the coolplate.
+Chemically amplified resists and cross-linking negative resists must be baked after exposure in order to finish the process initiated by the exposure light. Post-exposure bake, or PEB, can be carried out as a contact bake or a proximity bake. In a contact bake, the wafer is held in close contact to the hotplate surface by vacuum during the bake. In a proximity bake, the wafer is first moved into close proximity, e.g. 1mm, of the hotplate surface, then held there for the duration of the bake. Since the hotplate temperatures of Spin Track 1 + 2 are fixed, PEB is only possible at 90°C or 110°C. In practice, only 110°C (Spin Track 2) is used. After baking, the wafer is cooled for 5 seconds on the coolplate.
 =Standard Processes=