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Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing: Difference between revisions

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==Post-exposure baking (PEB)==
==Post-exposure baking (PEB)==
Negative resists and chemically amplified positive resists must be baked after exposure in order to finish the process initiated by the exposure light.
Chemically amplified resists and cross-linking negative resists must be baked after exposure in order to finish the process initiated by the exposure light.


''Flow names and process parameters:''
''Flow names and process parameters:''
*'''T2 5214E image reversal bake'''
*'''T2 5214E image reversal bake'''
Process parameters: 100s contact bake at 110°C.
Process parameters: 100s contact bake at 110°C.
*'''T2 MiR 701 PEB'''
Process parameters: 60s 1mm proximity bake at 110°C.
*'''T2 nLOF 2020 PEB'''
Process parameters: 60s contact bake at 110°C.
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