Specific Process Knowledge/Etch/Wet Polysilicon Etch: Difference between revisions
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*R<sub>SiO<sub>2</sub></sub> ~60 Å/min | *R<sub>SiO<sub>2</sub></sub> ~60 Å/min | ||
*Photoresist (2.2 µm) withstand ~20-30 min | *Photoresist (2.2 µm) withstand ~20-30 min | ||
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|Batch size | |Batch size | ||
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|Size of substrate | |Size of substrate | ||
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2- | 2-4" wafers | ||
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