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Specific Process Knowledge/Etch/Wet Polysilicon Etch: Difference between revisions

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*R<sub>Si</sub> ~1000-2000 Å/min (depending on doping level)
*R<sub>Si</sub> ~1000-2000 Å/min (depending on doping level)
*~60 Å/min (si-rich Si<sub>3</sub>N<sub>4</sub>)
*R<sub>SiO<sub>2</sub></sub> ~60 Å/min
*~30 Å/min (annealed si-rich Si<sub>3</sub>N<sub>4</sub>)
*Photoresist (2.2 µm) withstand ~20-30 min
*~4 Å/min (Thermal oxide)
*~4 Å/min (Thermal oxide)
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