Specific Process Knowledge/Etch/Wet Polysilicon Etch: Difference between revisions
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|Etch rate | |Etch rate | ||
| | | | ||
* | *R<sub>Si</sub> ~1000-2000 Å/min (depending on doping level) | ||
*~60 Å/min (si-rich Si<sub>3</sub>N<sub>4</sub>) | *~60 Å/min (si-rich Si<sub>3</sub>N<sub>4</sub>) | ||
*~30 Å/min (annealed si-rich Si<sub>3</sub>N<sub>4</sub>) | *~30 Å/min (annealed si-rich Si<sub>3</sub>N<sub>4</sub>) | ||