Specific Process Knowledge/Etch/Wet Polysilicon Etch: Difference between revisions
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The Poly Etch is based on the combined oxidation of silicon followed by dissolution of the silicon oxide. The etch solution consists of: | The Poly Etch is based on the combined oxidation of silicon followed by dissolution of the silicon oxide. The etch solution consists of: | ||
HNO<sub>3</sub> : BHF : H<sub>2</sub>O | HNO<sub>3</sub> : BHF : H<sub>2</sub>O (20 : 1 : 20) | ||
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|- | |- | ||
|Chemical solution | |Chemical solution | ||
| | |HNO<sub>3</sub> : BHF : H<sub>2</sub>O (20 : 1 : 20) | ||
|- | |- | ||
|Process temperature | |Process temperature | ||
| | |Room temperature | ||
|- | |- | ||
|Possible masking materials: | |Possible masking materials: | ||
| | | | ||
* | *Photoresist(min. 2.2 µm is recommended) | ||
*LPCVD-oxide (TEOS) | *LPCVD-oxide (TEOS) | ||
|- | |- | ||
|Etch rate | |Etch rate | ||