Specific Process Knowledge/Doping: Difference between revisions
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Revision as of 13:04, 6 October 2014
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Doping your wafer
This page is about doping your wafer or making a thin film layer doped with boron, phosphor or Germane.
- PECVD - Making boron glass (BSG), phosphorus glass (PSG), boron-phosphorus glass PBSG or germanium doped glass
- Furnace LPCVD PolySilicon - Deposition of PolySi doped with B or P
- Dope with Boron - Doping Silicon wafers with boron by thermal predeposition and drive-in
- Dope with Phosphorus - Doping Silicon wafers with phosphorus by thermal predeposition and drive-in
- Ion implantation
Comparison method 1 and method 2 for the process
| Phosphor predep | Boron predep | Doped Poly Si | PECVD doped thin film | |
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| Generel description | Dopants introduced by Diffusion from gas-phase (POCL) | Dopants introduced by Diffusion from solid source wafers | Dopants introduced by in-situ doping of poly/amorphous Si | Deposition of doped thin film (doped oxides or nitrides) |
| Parameter 1 |
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| Parameter 2 |
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| Substrate size |
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| Allowed materials |
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Ion implantation
Cannot be done at Danchip. We recommend ...