Specific Process Knowledge/Doping: Difference between revisions
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![[Specific Process Knowledge/ | ![[Specific_Process_Knowledge/Thermal_Process/A4_Phosphor_Pre-dep_furnace|Phosphor predep]] | ||
![[Specific Process Knowledge/ | ![[Specific_Process_Knowledge/Thermal_Process/A1_Bor_Drive-in_furnace|Boron predep]] | ||
![[Specific Process Knowledge/Thin_film_deposition/Furnace_LPCVD_PolySilicon|Doped Poly Si]] | |||
![[Specific Process Knowledge/Thin_film_deposition/PECVD|PECVD doped thin film]] | |||
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!Generel description | !Generel description | ||
| | |Dopants introduced by Diffusion from gas-phase (POCL) | ||
| | |Dopants introduced by Diffusion from solid source wafers | ||
|Dopants introduced by in-situ doping of poly/amorphous Si | |||
|Deposition of doped thin film (doped oxides or nitrides) | |||
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!Parameter 1 | !Parameter 1 | ||
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*B | |||
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*A | |||
*B | |||
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*A | *A | ||