Specific Process Knowledge/Etch/DryEtchProcessing: Difference between revisions
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* Trend Graphs: Select which equations to be displayed. These graphs will enable you to monitor the development of the Peaks relevant for you as you etch your sample. | * Trend Graphs: Select which equations to be displayed. These graphs will enable you to monitor the development of the Peaks relevant for you as you etch your sample. | ||
*Sequence, Reprocess and Properties: Beyond the scope of this manual | *Sequence, Reprocess and Properties: Beyond the scope of this manual | ||
=== Processing === | |||
Once the configuration file has been set up, it must be activated. To do so, right-click on the configuration file in the System window that you wish to use and select 'Set as Current'. | |||
To start monitoring click one of three buttons marked by a yellow square above. | |||
; M - Monitor: | |||
: The system will monitor the Graphs (Spectral and Trend) that have been set up in the configuration file. Panels with these Graphs will pop up. The data will not be stored. It is very useful to click the 'Tile' option under Window settings. | |||
; C - Capture: | |||
: In addition to the monitoring described above the data will be stored on the hard drive. This enables you to analyse the data afterwards. | |||
; P - Processing: | |||
: In addition to the monitoring and capturing of the data as described above, this mode will also feed an end point to the SPTS operator computer. It is, however, advised not to use this mode as it doesn't work for several reasons: | |||
* It requires that an endpoint has been defined in the configuration file under 'Sequence' which is beyond the scope of this manual. | |||
* It requires that the etch recipe on the SPTS computer has been set up for it. | |||
=== Limitations === | |||
The endpoint detector may seem to be powerful tool - but it has some drawbacks. Below are listed some points that is maybe worth considering: | |||
; The etch process parameters: | |||
: The intensity of the plasma relies heavily on process parameters such as RF powers, pressure and gas flows. It is clear that if these parameters are low, the intensity of the plasma is low and therefore the signal to noise ratio will be low. | |||
; The intensity of the species to monitor: | |||
: The concentration of some etch product in the plasma is strongly dependent on the area that is etched. Are you etching small holes on a small chip lying on a carrier, the signal you are looking for is infinitely smaller than if you etch large areas on an entire wafer. The same applies to (high/low) etch rates. | |||
== Temporary bonding of wafers or chips for dry etching == | == Temporary bonding of wafers or chips for dry etching == | ||