Specific Process Knowledge/Thermal Process/Oxidation/Wet oxidation C1 furnace: Difference between revisions
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To study the effect of the process temperature, growth time and steamer flow on the silicon dioxide | To study the effect of the process temperature, growth time and steamer flow rate on the silicon dioxide thickness and the percent of film non-uniformity. To form the prediction equations, which be able to calculate the growth time from the expected oxide thickness, or calculate the oxide thickness from the growth time. | ||
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