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Specific Process Knowledge/Thermal Process/Oxidation/Wet oxidation C1 furnace: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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Paphol (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
912 edits
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====Experimental setup (2) Steamer flow rate has been fixed at 10 liter/minutes====
====Experimental setup (2) Steamer flow rate has been fixed at 10 liter/minutes====
'''
'''
The boat was fully filled with dummy wafers, and there are three tested wafers per run. The three tested wafers were placed at slot number 6, 15 and 24. The average silicon dioxide thickness and the percent of film non-uniformity over the boat were calculated form those three test wafers. The average silicon dioxide thickness and the percent of film non-uniformity over the wafer was calculated from the wafer slot no.15, which was placed in the middle of the boat.  
The steamer flow rate has been fixed at 10liter per minutes. The test was done in difference growth time.    


'''Pressure:'''  Atmosphere
'''Pressure:'''  Atmosphere
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'''Temperature:''' 1000, 1050, 1100 C
'''Temperature:''' 1000, 1050, 1100 C


'''Time:''' 0, 5, 15, 100, 180,250, 360, 720 minutes
'''Time:''' 0, 5, 15, 100, 180, 250, 360, 720 minutes


'''Steamer Flow Rate:''' 10 L/min
'''Steamer Flow Rate:''' 10 L/min
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