Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions

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 ! General description
-|Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for dry and wet oxidation.||Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for dry and wet oxidation.||Oxidation of gate-oxide and other especially clean oxides. At the moment also used for general oxidation of 6" wafers.||Annealing and oxidation of wafers from the B-stack and PECVD1.||Annealing and oxidation of wafers from NIL.||Annealing of wafers with aluminium on.||||
+|Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for oxidation.||Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for oxidation.||Oxidation of gate-oxide and other especially clean oxides. At the moment also used for general annealing and oxidation of 6" wafers.||Annealing and oxidation of wafers from the B-stack and PECVD1.||Annealing and oxidation of wafers from NIL.||Annealing of wafers with aluminium.||Annealing and oxidation of any material.||Rapid thermal annealing.
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-! Dry annealing
+! Annealing with N<math>_2</math>
 |x||x||x (with special permission)||x||x||x||x||x
 |-
-!Wet annealing with bubler (water steam + N2)
+!Wet annealing with bubler (water steam + N<math>_2</math>)
-|||||x (with special permission)||x||x||||||
+|.||.||.||x||x||.||.||.
 |-
-!Process temperature
+!Process temperature [ <sup>o</sup>C ]
-|800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C||800-1150 <sup>o</sup>C||800-1150<sup>o</sup>C||?
+|800-1150||800-1150||800-1150||800-1150||800-1150||800-1150||22-1000<sup>o</sup>C||?
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 ! Batch size
-|max. 30 wafers of 4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 wafers of 6",4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers||?||?
+|max. 30 wafers of 4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 wafers of 6",4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers||30x4" or small pieces||?
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 !style="background:#f0f0f0;"|Which wafers are allowed to enter the furnace:
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 | align="center" style="background:#f0f0f0;"|'''C3 Anneal bond'''
 | align="center" style="background:#f0f0f0;"|'''C4 Anneal aluminium'''
-| align="center" style="background:#f0f0f0;"|'''Nobel furnace'''
+| align="center" style="background:#f0f0f0;"|'''Nobel'''
 | align="center" style="background:#f0f0f0;"|'''RTP'''
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 | RCA clean** Si wafers with no history of Metals on||x||x||x (with special permission)||x||x||x||x||x
 |-
-| From Predep furnace  directly (e.g. incl. Predep HF**)||From A2||From A4||||||||||||
+| From Predep furnace  directly (e.g. incl. Predep HF**)||From A2||From A4||.||x||x||x||x||x
 |-
-| Wafers directly from PECVD1||||||||x||x||x||x||x
+| Wafers directly from PECVD1||.||.||.||x||x||x||x||x
 |-
-| Wafers directly from NIL bonding||||||||||x||x||x||x
+| Wafers directly from NIL bonding||.||.||.||.||x||x||x||x
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-|Wafers with aluminium on||||||||||||x||x||x
+|Wafers with aluminium||.||.||.||.||.||x||x||.
 |-
-|wafers with other metals||||||||||||||x||x
+|wafers with other metals||.||.||.||.||.||.||x||.
 |-
 |wafers with III-V materials||||||||||||||||x