Specific Process Knowledge/Thermal Process/Oxidation/Wet oxidation C1 furnace: Difference between revisions
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The Wet oxidation by Anneal Oxide Furnace(C1) can be used for growing silicon dioxide by using steamer, which gives a very good film uniformity. | The Wet oxidation by Anneal Oxide Furnace(C1) can be used for growing silicon dioxide by using steamer, which gives a very good film uniformity. | ||
===Calculation for wet oxidation=== | |||
The following links give an approximate oxide time/thickness based on a general formula: | |||