Specific Process Knowledge/Thermal Process/Oxidation/Wet oxidation C1 furnace: Difference between revisions
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The boat was fully filled with dummy wafers, and there are three tested wafers per run. The three tested wafers were placed at slot number 6, 15 and 24. The average silicon dioxide thickness and the percent of film non-uniformity over the boat were calculated form those three test wafers. The average silicon dioxide thickness and the percent of film non-uniformity over the wafer was calculated from the wafer slot no.15, which was placed in the middle of the boat. | The boat was fully filled with dummy wafers, and there are three tested wafers per run. The three tested wafers were placed at slot number 6, 15 and 24. The average silicon dioxide thickness and the percent of film non-uniformity over the boat were calculated form those three test wafers. The average silicon dioxide thickness and the percent of film non-uniformity over the wafer was calculated from the wafer slot no.15, which was placed in the middle of the boat. | ||
'''Pressure:''' Atmosphere | '''Pressure:''' Atmosphere | ||
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[[image:Steamer_process_develop_fig1.png|527 × 324 px|middle|The average silicon dioxide thickness and the percent of film non-uniformity over the boat variation with process time, steamer flow rate and temperature.]] | [[image:Steamer_process_develop_fig1.png|527 × 324 px|middle|The average silicon dioxide thickness and the percent of film non-uniformity over the boat variation with process time, steamer flow rate and temperature.]] | ||
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'''Figure 2.''' The average silicon dioxide thickness and the percent of film non-uniformity over the wafer variation with process time, steamer flow rate and temperature. | '''Figure 2.''' The average silicon dioxide thickness and the percent of film non-uniformity over the wafer variation with process time, steamer flow rate and temperature. | ||
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The boat was fully filled with dummy wafers, and there are three tested wafers per run. The three tested wafers were placed at slot number 6, 15 and 24. The average silicon dioxide thickness and the percent of film non-uniformity over the boat were calculated form those three test wafers. The average silicon dioxide thickness and the percent of film non-uniformity over the wafer was calculated from the wafer slot no.15, which was placed in the middle of the boat. | The boat was fully filled with dummy wafers, and there are three tested wafers per run. The three tested wafers were placed at slot number 6, 15 and 24. The average silicon dioxide thickness and the percent of film non-uniformity over the boat were calculated form those three test wafers. The average silicon dioxide thickness and the percent of film non-uniformity over the wafer was calculated from the wafer slot no.15, which was placed in the middle of the boat. | ||
'''Pressure:''' Atmosphere | '''Pressure:''' Atmosphere | ||
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[[image:Steamer_process_develop_fig4.png|527 × 324 px|middle|Silicon dioxide thickness variation with growth time (from 0 to 720 minutes) in different temperature.]] | [[image:Steamer_process_develop_fig4.png|527 × 324 px|middle|Silicon dioxide thickness variation with growth time (from 0 to 720 minutes) in different temperature.]] | ||
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'''Figure 4.''' Silicon dioxide thickness variation with growth time (from 0 to 720 minutes) in different temperature. | |||
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[[image:Steamer_process_develop_fig5.png|527 × 324 px|middle|The percent of film non-uniformity variation with growth time in different temperature. (left) Over the boat and (right) over the wafer.]] | |||
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'''Figure 5.''' The percent of film non-uniformity variation with growth time in different temperature. (left) Over the boat and (right) over the wafer | |||
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From figure 5 shown that the percent of film non-uniformity deceases when the process time and process temperature increase. From this experiment, show that the silicon dioxide has a very good uniformity. The percent of film non-uniformity is lower than 1.5 over the boat, and lower than 1.2 over the wafer. | |||
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