Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions

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 ==Annealing==
-At Danchip we have seven furnaces and an RTP for annealing: A1,A3,C1,C2,C3,C4 noble furnace and RTP. Annealing can take place either by a dry process or a wet process. In a wet annealing you will also get some oxidation.
+At Danchip we have seven furnaces and an RTP for annealing: A1,A3,C1,C2,C3,C4, noble furnace and RTP. Annealing normally takes place in an N<math>_2</math> atmosphere. PECVD PBSG is annealed in an wet atmosphere which will also oxidize the silicon substrate.
-*Dry anneal is used for ? and can be done in furnaces:A1,A3,C1,C2,C3,C4, noble furnace and RTP
+*Anneal with N<math>_2</math> can be done in furnaces:A1,A3,C1,C2,C3,C4, noble furnace and RTP
-*Wet anneal with H2O in a bubbler is used for ? and can be done in furnaces:C1,C2,C3.
+*Wet anneal with H<math>_2</math>O in a bubbler can be done in furnaces:C2 and C3.
 ==Comparing the seven annealing equipments==