Specific Process Knowledge/Thermal Process/Oxidation/Wet oxidation C1 furnace: Difference between revisions
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The boat was fully filled with dummy wafers, and there are three tested wafers per run. The three tested wafers were placed at slot number 6, 15 and 24. | The boat was fully filled with dummy wafers, and there are three tested wafers per run. The three tested wafers were placed at slot number 6, 15 and 24. | ||
'''Pressure:''' Atmosphere | '''Pressure:''' Atmosphere | ||
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'''Steamer Flow Rate:''' 10, 17.5, 25 L/min | '''Steamer Flow Rate:''' 10, 17.5, 25 L/min | ||
'''Anneal:''' Same | '''Anneal:''' Same as process temperature for 20 minutes with N2: 6 SLM | ||
'''Test Wafers:''' N-Type <100> No RCA Clean | '''Test Wafers:''' N-Type <100> No RCA Clean | ||
Revision as of 12:52, 29 September 2014
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The Wet oxidation by Anneal Oxide Furnace(C1) can be used for growing silicon dioxide by using steamer, which gives a very good film uniformity.
Test of the wet oxidation by steamer
Purpose
To study the effect of the process temperature, growth time and steamer flow on the silicon dioxide thinkness and the percent of film non-uniformity.
Experimental setup
The boat was fully filled with dummy wafers, and there are three tested wafers per run. The three tested wafers were placed at slot number 6, 15 and 24.
Pressure: Atmosphere
Temperature: 1000, 1050, 1100 C
Time: 15, 180, 360, 720 minutes
Steamer Flow Rate: 10, 17.5, 25 L/min
Anneal: Same as process temperature for 20 minutes with N2: 6 SLM
Test Wafers: N-Type <100> No RCA Clean