Specific Process Knowledge/Thermal Process/Oxidation/Wet oxidation C1 furnace: Difference between revisions

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 '''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Oxidation/Wet_oxcidation_C1_furnace click here]'''
+The Wet oxidation by Anneal Oxide Furnace(C1) can be used for growing silicon dioxide by using steamer, which gives a very good film uniformity.
+'''
+==Test of the wet oxidation by steamer==
+'''
+'''
+====Purpose====
+'''
+To study the effect of the process temperature, growth time and steamer flow on the silicon dioxide thinkness and the percent of film non-uniformity.
+'''
+====Experimental setup====
+'''
+The boat was fully filled with dummy wafers, and there are three tested wafers per run. The three tested wafers were placed at slot number 6, 15 and 24.
+'''Pressure:'''  Atmosphere
+'''Temperature:''' 1000, 1050, 1100 C
+'''Time:''' 15, 180, 360, 720 minutes
+'''Steamer Flow Rate:''' 10, 17.5, 25 L/min
+'''Anneal:''' Same Temperature for 20 minutes with N2: 6 SLM
+'''Test Wafers:''' N-Type <100> No RCA Clean