Specific Process Knowledge/Thermal Process/C1 Furnace Anneal-oxide: Difference between revisions
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==Process knowledge== | ==Process knowledge== | ||
* | *WET oxidation: with [[Specific Process Knowledge/Thermal Process/ C1 Furnace Anneal-oxide/steamer process develop|steamer]] | ||
*DRY oxidation: look at the [[Specific Process Knowledge/Thermal Process/Oxidation|Oxidation]] page | |||
*Annealing: look at the [[Specific Process Knowledge/Thermal Process/Annealing|Annealing]] page | *Annealing: look at the [[Specific Process Knowledge/Thermal Process/Annealing|Annealing]] page | ||
==Overview of the performance of Anneal Oxide furnace and some process related parameters== | ==Overview of the performance of Anneal Oxide furnace and some process related parameters== |
Revision as of 08:03, 29 September 2014
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Anneal-oxide furnace (C1)
The Anneal-oxide furnace (C1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers, e.g with layers of oxide, polysilicon or BPSG glass (from PECVD2). Both 100 mm and 150 mm wafers can be processed in the furnace.
The Anneal-oxide furnace is the top furnace tube in the C-stack furnaces, which positioned in cleanroom B-1. All wafers have to do RCA cleaned before they enter the furnace. The only exceptions are the brand new wafer, the wafers from A-stack furnaces, the wafers from PECVD2 and the LPCVD furnaces. Please check the cross contamination information in LabManager before you use the furnace
The user manual, technical information and contact information can be found in LabManager:
Process knowledge
- WET oxidation: with steamer
- DRY oxidation: look at the Oxidation page
- Annealing: look at the Annealing page
Purpose |
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Oxidation:
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Performance | Film thickness |
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Process parameter range | Process Temperature |
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Process pressure |
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Gas flows |
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Substrates | Batch size |
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Substrate materials allowed |
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