Jump to content

Specific Process Knowledge/Etch/Wet Silicon Nitride Etch: Difference between revisions

Line 53: Line 53:
*~4 Å/min (Thermal oxide)
*~4 Å/min (Thermal oxide)
|
|
*~?? Å/min (stoichiometric Si<sub>3</sub>N<sub>4</sub>)
*~26 Å/min (si-rich Si<sub>3</sub>N<sub>4</sub>)
*~26 Å/min (si-rich Si<sub>3</sub>N<sub>4</sub>)
*~4 Å/min (Thermal oxide)
*~? Å/min (Thermal oxide)
|-
|-
|Batch size
|Batch size