Specific Process Knowledge/Etch/Wet Silicon Nitride Etch: Difference between revisions
| Line 48: | Line 48: | ||
|Etch rate | |Etch rate | ||
| | | | ||
*~ | *~85 Å/min (stoichiometric Si<sub>3</sub>N<sub>4</sub>) | ||
*~60 Å/min (si-rich Si<sub>3</sub>N<sub>4</sub>) | *~60 Å/min (si-rich Si<sub>3</sub>N<sub>4</sub>) | ||
*~30 Å/min (annealed si-rich Si<sub>3</sub>N<sub>4</sub>) | |||
*~4 Å/min (Thermal oxide) | *~4 Å/min (Thermal oxide) | ||
| | | | ||
~ | *~?? Å/min (stoichiometric Si<sub>3</sub>N<sub>4</sub>) | ||
*~26 Å/min (si-rich Si<sub>3</sub>N<sub>4</sub>) | |||
*~4 Å/min (Thermal oxide) | |||
|- | |- | ||
|Batch size | |Batch size | ||