Specific Process Knowledge/Etch/Wet Silicon Nitride Etch: Difference between revisions
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*~84 Å/min (stoichiometric Si<sub>3</sub>N<sub>4</sub>) | *~84 Å/min (stoichiometric Si<sub>3</sub>N<sub>4</sub>) | ||
*~ | *~60 Å/min (si-rich Si<sub>3</sub>N<sub>4</sub>) | ||
*~ | *~4 Å/min (Thermal oxide) | ||
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~(??) nm/min | ~(??) nm/min | ||