Specific Process Knowledge/Etch/Wet Silicon Nitride Etch: Difference between revisions
| Line 38: | Line 38: | ||
|Possible masking materials: | |Possible masking materials: | ||
| | | | ||
Thermal oxide (converted si-rich surface) | *Thermal oxide (converted si-rich surface) | ||
LPCVD-oxide (TEOS) | *LPCVD-oxide (TEOS) | ||
*PECVD-oxide | |||
PECVD-oxide | |||
| | | | ||
Photoresist (1.5 µm AZ5214E) | Photoresist (1.5 µm AZ5214E) | ||