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| {|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 60%;" | | {|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 60%;" |
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| | |+style="background:Black; color:White" colspan="3"|'''Etch Tests on Deep Reactive Ion Etch PEGASUS A-1''' |
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| |4" Si wafers | | |4" Si wafer with non-patterned CSAR |
| |1 min @ 110 degC, hotplate | | |nano1.42 |
| | | | |56.5 nm/min (based on 2 runs) |
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| |Spin Coater Manual, LabSpin, A-5 | | |4" Si wafer with non-patterned CSAR, postbaked 60 sec @ 130 degC |
| |mr EBL 6000.1 E-beam resist | | |nano1.42 |
| 60 sec at various spin speed.
| | |56.5 nm/min (based on 2 runs) |
| Acceleration 2000 s-2,
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| softbake 3 min at 110 deg Celcius
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| |Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice. | |
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| |Ellipsometer VASE B-1 | | |1/4 4" Si wafer with non-patterned CSAR, not crystal bonded to carrier |
| |9 points measured on 100 mm wafer | | |83.3 nm/min (based on 3 runs) |
| |ZEP program used; measured at 70 deg only | | | |
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| |JEOL 9500 E-beam writer, E-1 | | |1/4 4" Si wafer with non-patterned CSAR, crystal bonded to 4" Si carrier |
| |Dosepattern 15nm - 100nm,
| | |54 nm/min (based on 1 run) |
| dose 120-280 muC/cm2
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| |Virtual chip mark height detection (CHIPAL V1) used in corner of every dose array
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| |Fumehood, D-3
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| |60 sec in
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| 60 sec rinse in IPA,
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| N2 Blow dry
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| |Gentle agitation while developing. After developing, wafer is immersed in beaker with IPA, subsequently blow dried with N2 gun.
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| |Zeiss SEM Supra 60VP, D-3
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| |2-3 kV, shortest working distance possible, chip mounted with Al tape | |
| |The wafers are diced into smaller pieces and sputter coated with Pt at DTU CEN before SEM inspection; please contact [mailto:ramona.mateiu@cen.dtu.dk Ramona Valentina Mateiu] for further information. | |
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| |} | | |} |
