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Specific Process Knowledge/Lithography/CSAR: Difference between revisions

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DCH-Employees-701
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Tigre (talk | contribs)
DCH-Employees-701
2,257 edits
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|-style="background:LightGrey; color:black"
|4" Si wafers
|4" Si wafers
|1 min @ 110 degC, hotplate
|1 min @ 110 degC, hotplate
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|-style="background:LightGrey; color:black"
|Spin Coater Manual, LabSpin, A-5
|Spin Coater Manual, LabSpin, A-5
|mr EBL 6000.1 E-beam resist
|mr EBL 6000.1 E-beam resist
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|Ellipsometer VASE B-1
|Ellipsometer VASE B-1
|9 points measured on 100 mm wafer
|9 points measured on 100 mm wafer
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|-style="background:LightGrey; color:black"
|JEOL 9500 E-beam writer, E-1
|JEOL 9500 E-beam writer, E-1
|Dosepattern 15nm - 100nm,  
|Dosepattern 15nm - 100nm,  
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|Fumehood, D-3
|Fumehood, D-3
|60 sec in  
|60 sec in  
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|-style="background:LightGrey; color:black"
|Zeiss SEM Supra 60VP, D-3
|Zeiss SEM Supra 60VP, D-3
|2-3 kV, shortest working distance possible, chip mounted with Al tape  
|2-3 kV, shortest working distance possible, chip mounted with Al tape  
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