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Specific Process Knowledge/Thin film deposition/Deposition of Nickel: Difference between revisions

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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]])
! Electroplating ([[Specific Process Knowledge/Thin film deposition/Electroplating-Ni|Electroplating-Ni]])
! Electroplating ([[Specific Process Knowledge/Thin film deposition/Electroplating-Ni|Electroplating-Ni]])
|-  
|-  
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! General description
! General description
|E-beam deposition of Nickel
|E-beam deposition of Nickel
|E-beam deposition of Nickel
|E-beam deposition of Nickel
|E-beam deposition of Nickel
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|RF Ar clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
|
|None
|None
|-
|-
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|10Å to 1 µm*
|10Å to 1 µm*
|10Å to 1000 Å
|10Å to 1000 Å
|10Å to 2000 Å
|A few µm to 1400 µm
|A few µm to 1400 µm
|-
|-
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|10Å/s to 15Å/s
|10Å/s to 15Å/s
|About 1Å/s  
|About 1Å/s  
|1 to 10Å/s
|About 10 Å/s to 250 Å/s
|About 10 Å/s to 250 Å/s


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*12x4" wafers or
*12x4" wafers or
*4x6" wafers  
*4x6" wafers  
|
*1x 2" wafer or
*1x 4" wafers or
*Several smaller pieces
|
|
*1x2" wafer or
*1x2" wafer or
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* Mylar  
* Mylar  
* SU-8  
* SU-8  
|
* Silicon oxide
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
|
|
* Silicon
* Silicon
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*Thicknesses above 2000 Å  requires special permission
*Thicknesses above 2000 Å  requires special permission
|Only very thin layers (up to 100nm).
|Only very thin layers (up to 100nm).
|
|Sample must be compatible with plating bath. Seed metal necessary.
|Sample must be compatible with plating bath. Seed metal necessary.
|-
|-