Specific Process Knowledge/Thin film deposition/Deposition of Nickel: Difference between revisions
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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]]) | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]]) | |||
! Electroplating ([[Specific Process Knowledge/Thin film deposition/Electroplating-Ni|Electroplating-Ni]]) | ! Electroplating ([[Specific Process Knowledge/Thin film deposition/Electroplating-Ni|Electroplating-Ni]]) | ||
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! General description | ! General description | ||
|E-beam deposition of Nickel | |||
|E-beam deposition of Nickel | |E-beam deposition of Nickel | ||
|E-beam deposition of Nickel | |E-beam deposition of Nickel | ||
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|RF Ar clean | |RF Ar clean | ||
|RF Ar clean | |RF Ar clean | ||
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|None | |None | ||
|- | |- | ||
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|10Å to 1 µm* | |10Å to 1 µm* | ||
|10Å to 1000 Å | |10Å to 1000 Å | ||
|10Å to 2000 Å | |||
|A few µm to 1400 µm | |A few µm to 1400 µm | ||
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|10Å/s to 15Å/s | |10Å/s to 15Å/s | ||
|About 1Å/s | |About 1Å/s | ||
|1 to 10Å/s | |||
|About 10 Å/s to 250 Å/s | |About 10 Å/s to 250 Å/s | ||
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*12x4" wafers or | *12x4" wafers or | ||
*4x6" wafers | *4x6" wafers | ||
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*1x 2" wafer or | |||
*1x 4" wafers or | |||
*Several smaller pieces | |||
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*1x2" wafer or | *1x2" wafer or | ||
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* Mylar | * Mylar | ||
* SU-8 | * SU-8 | ||
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* Silicon oxide | |||
* Silicon (oxy)nitride | |||
* Photoresist | |||
* PMMA | |||
* Mylar | |||
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* Silicon | * Silicon | ||
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*Thicknesses above 2000 Å requires special permission | *Thicknesses above 2000 Å requires special permission | ||
|Only very thin layers (up to 100nm). | |Only very thin layers (up to 100nm). | ||
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|Sample must be compatible with plating bath. Seed metal necessary. | |Sample must be compatible with plating bath. Seed metal necessary. | ||
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Revision as of 11:50, 12 September 2014
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Nickel deposition
Nickel can be deposited by e-beam evaporation or electroplating. In the chart below you can compare the different deposition equipment.
| E-beam evaporation (Alcatel) | E-beam evaporation (Wordentec) | E-beam evaporation (PVD co-sputter/evaporation) | E-beam evaporation (Physimeca) | Electroplating (Electroplating-Ni) | |
|---|---|---|---|---|---|
| General description | E-beam deposition of Nickel | E-beam deposition of Nickel | E-beam deposition of Nickel | E-beam deposition of Nickel | Electroplating of Nickel |
| Pre-clean | RF Ar clean | RF Ar clean | RF Ar clean | None | |
| Layer thickness | 10Å to 5000 Å* | 10Å to 1 µm* | 10Å to 1000 Å | 10Å to 2000 Å | A few µm to 1400 µm |
| Deposition rate | 2Å/s to 15Å/s | 10Å/s to 15Å/s | About 1Å/s | 1 to 10Å/s | About 10 Å/s to 250 Å/s |
| Batch size |
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| Allowed materials |
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Base materials:
Seed metals:
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| Comment | Thicknesses above 2000 Å requires special permission |
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Only very thin layers (up to 100nm). | Sample must be compatible with plating bath. Seed metal necessary. |
* To deposit layers thicker then 2000 Å permission is required (contact Thin film group)