Specific Process Knowledge/Thin film deposition/Deposition of Germanium: Difference between revisions
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! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
! E-beam evaporation ([[ | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]]) | ||
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Revision as of 09:01, 12 September 2014
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Deposition of Germanium
Germanium can be deposited by thermal evaporation and e-beam evaporation.
Thermal deposition
Thermal evaporation (Wordentec) | E-beam evaporation (Physimeca) | |
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General description | Thermal deposition of Ge | E-beam deposition of Ge |
Pre-clean | RF Ar clean | - |
Layer thickness | 10Å to about 2000Å | 10Å to about 3000Å |
Deposition rate | From 0.4 Å/s up to about ~2Å/s | From 5 Å/s up to 10/s |
Batch size |
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Allowed substrates |
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Allowed materials |
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Comment | Recommended for unexposed e-beam resist | . |