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Specific Process Knowledge/Lithography/CSAR: Difference between revisions

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=== wafer 4.09 ===
The e-beam exposures presented here are written with 'SHOT A,10', i.e. a shot pitch of 5nm; this pitch works very well for large structures but not so well for 20nm or below. To illustrate this, ACHK screenshot are presented along with SEM inspection picures.
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;" style="width: 60%;"
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|-style="background:Black; text-align:left; color:White"
!Process
!Equipment
!Parameters
!Date and initials
|-
|-
|-style="background:WhiteSmoke; color:black"
|Resist
|Fumehood D-3
|AR-P 6200/2 AllResist E-beam resist diluted 1:1 in anisole
|16-06-2014 TIGRE
|-
|-style="background:WhiteSmoke; color:black"
|Spin Coat
|Spin Coater LabSpin A-5
|1 min @ 5000 rpm, 4000 1/s2, softbake 2 min @ 150 degC, thickness ~53nm
|16-06-2014 TIGRE
|-
|-
|-style="background:WhiteSmoke; color:black"
|E-beam exposure
|JEOL 9500 E-2
|0.2 nA, aperture 5, dose 207-242 muC/cm2, SHOT A,10, No proximity error correction
|02-07-2014 TIGRE
|-
|-
|-style="background:WhiteSmoke; color:black"
|Develop
|Fumehood D-3
|SX-AR 600-54/6 60 sec, 60 sec IPA rinse
|08-07-2014 TIGRE
|-
|-
|-style="background:WhiteSmoke; color:black"
|Sputter Coat
|Cressington 208HR, DTU CEN
|3-5 nm Pt, sputtering
|09-07-2014 TIGRE
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|-
|-style="background:WhiteSmoke; color:black"
|Characterization
|Zeiss SEM Supra 60VP, D-3
|3 kV, WD below 4mm, conducting tape close to pattern
|09-07-2014, TIGRE
|-
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