Specific Process Knowledge/Etch/ICP Metal Etcher/silicon nitride: Difference between revisions

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!Results  
!Results  
!Test on wafer with 20% load, ''by Izzet Yildiz @Nanotech''
!Test on wafer with 20% load, ''by Izzet Yildiz @Nanotech''
!Test by BGHE @danchip
|-
|-
|Etch rate of LPCVD nitride
|Etch rate of LPCVD nitride
|'''60-65 nm/min (20% etch load) (Feb. 2014)'''  
|'''60-65 nm/min (20% etch load) (Feb. 2014)'''  
|
|-
|-
|Selectivity to  resist [SiN : AZ resist]
|Selectivity to  resist [SiN : AZ resist]
|'''1:0.75'''
|'''1:0.75'''
|
|-
|-
|Wafer uniformity (100mm)
|Wafer uniformity (100mm)
|'''?'''
|'''?'''
|
|-
|-
|Profile [<sup>o</sup>]
|Profile [<sup>o</sup>]
|?
|?
|
|-
|-
|Wafer uniformity map (click on the image to view a larger image)
|Wafer uniformity map (click on the image to view a larger image)
|not measured  
|not measured  
|
|-
|-
|SEM profile images
|SEM profile images
|Not measured
|Not measured
|
|-
|Etch rate in Barc
|
|~50 nm/min (Date: 2014-09-09)
|-
|Etch rate in KRF resist
|
|~40 nm/min (Date: 2014-09-09)
|-
|-
|}
|}


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Revision as of 09:56, 9 September 2014

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Slow etch of silicon nitride with resist as masking material - on 6" carrier wafer with recess

This recipe can be used for slow etching of silicon nitride with resist as masking material. Here are some test results presented.

Parameter Resist mask
Coil Power [W] 200
Platen Power [W] 25
Platen temperature [oC] 0
CF4 flow [sccm] 20
H2 flow [sccm] 10
Pressure [mTorr] 3


Results Test on wafer with 20% load, by Izzet Yildiz @Nanotech Test by BGHE @danchip
Etch rate of LPCVD nitride 60-65 nm/min (20% etch load) (Feb. 2014)
Selectivity to resist [SiN : AZ resist] 1:0.75
Wafer uniformity (100mm) ?
Profile [o] ?
Wafer uniformity map (click on the image to view a larger image) not measured
SEM profile images Not measured
Etch rate in Barc ~50 nm/min (Date: 2014-09-09)
Etch rate in KRF resist ~40 nm/min (Date: 2014-09-09)