Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions

@@ Line 266: / Line 266: @@
 = Alignment of exposure to existing pattern on wafer =
-[[Image:P and Q marks.png|left|250px]]
+[[Image:P and Q marks.png|right|250px]]
-[[Image:GlobalMark.png|200px|thumb|Image:GlobalMark.png|200px|thumb|Text around the wafer mark is NOT recommended.]]
 {| cellpadding="2" style="border: 1px solid darkgray;" align="right"
-! width="140" | Correct
+! width="150" |
-! width="150" | Not Correct
+! width="150" |
 |- border="0"
 | [[File:mark example.png|120px]]
 | [[File:GlobalMark.png|120px]]
 |- align="center"
-| Correct mark || not
+| Correct mark || Text around mark not recommended
 |}