Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions
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[[Image:GlobalMark.png|200px|thumb|Image:GlobalMark.png|200px|thumb|Text around the wafer mark is NOT recommended.]] | [[Image:GlobalMark.png|200px|thumb|Image:GlobalMark.png|200px|thumb|Text around the wafer mark is NOT recommended.]] | ||
{| cellpadding="2" style="border: 1px solid darkgray;" | |||
! width="140" | Correct | |||
! width="150" | Not Correct | |||
|- border="0" | |||
| [[File:mark example.png|120px]] | |||
| [[File:GlobalMark.png|120px]] | |||
|- align="center" | |||
| Correct mark || not | |||
|} | |||
A set of global marks are needed in order to align an exposure to an existing pattern on a wafer. These marks should be clearly visible in a 100keV SEM, i.e. preferably defined by Ti/Au or another 'heavy' metal. Etched global marks or global marks defined by a light metal as Al can be hard to locate manually as well as automatically. | A set of global marks are needed in order to align an exposure to an existing pattern on a wafer. These marks should be clearly visible in a 100keV SEM, i.e. preferably defined by Ti/Au or another 'heavy' metal. Etched global marks or global marks defined by a light metal as Al can be hard to locate manually as well as automatically. | ||