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Specific Process Knowledge/Lithography/CSAR: Difference between revisions

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{| class="wikitable collapsible collapsed" style="border: 5px solid black;"  style="width: 90%;" align="center"  
{| class="wikitable collapsible collapsed" style="border: 5px solid black;"  style="width: 90%;" align="center"  
!colspan="6"|  SEM inspection of wafer 4.09, 30 nm exposed pattern, shot pitch 5 nm
!colspan="4"|  SEM inspection of wafer 4.09, 30 nm exposed pattern, shot pitch 5 nm
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{|style="border: 5px solid black;"  style="width: 90%;" align="center"
{| class="wikitable collapsible collapsed" style="border: 5px solid black;"  style="width: 90%;" align="center"  
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!colspan="4"|   SEM inspection of wafer 4.09, 20 nm exposed pattern, shot pitch 5 nm
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!colspan="4"|Wafer 4.09, 20 nm exposed pattern, shot pitch 5 nm
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{|style="border: 5px solid black;"  style="width: 90%;" align="center"
{| class="wikitable collapsible collapsed" style="border: 5px solid black;"  style="width: 90%;" align="center"  
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!colspan="4"|   SEM inspection of wafer 4.09, 15 nm exposed pattern, shot pitch 5 nm
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|-style="background:Black; color:White"
!colspan="4"|Wafer 4.09, 15 nm exposed pattern, shot pitch 5 nm
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