Jump to content

Specific Process Knowledge/Lithography/CSAR: Difference between revisions

Tigre (talk | contribs)
Tigre (talk | contribs)
Line 541: Line 541:
|}
|}


{| class="wikitable collapsible collapsed"
! Simple collapsible table
|-
| Lorem ipsum dolor sit amet
|}


{| class="wikitable collapsible collapsed" style="border: 5px solid black;"  style="width: 90%;" align="center"  
{| class="wikitable collapsible collapsed" style="border: 5px solid black;"  style="width: 90%;" align="center"  
Line 558: Line 553:
|}
|}


{|style="border: 5px solid black;"  style="width: 90%;" align="center"
|-
|-
|-style="background:Black; color:White" 
!colspan="6"|Wafer 4.09, 50 nm exposed pattern, shot pitch 5 nm
|-
|-
! 230 [muC/cm2]
| [[File:53nmCSAR50nmOverviewBasedose.png|250px]]
| [[File:53nmCSAR50nmLinesBasedose.png|250px]]
| [[File:53nmCSAR50nmHolesBasedose.png|250px]]
| [[File:53nmCSAR50nmPillarsBasedose.png|250px]]
| [[File:53nmCSAR50nmTestBasedose.png|250px]]
|-
|}


{|style="border: 5px solid black;"  style="width: 90%;" align="center"
 
|-
{| class="wikitable collapsible collapsed" style="border: 5px solid black;"  style="width: 90%;" align="center"  
|-
!colspan="6"|   SEM inspection of wafer 4.09, 30 nm exposed pattern, shot pitch 5 nm
|-style="background:Black; color:White"
!colspan="4"|Wafer 4.09, 30 nm exposed pattern, shot pitch 5 nm
|-
|-
|-  
|-