Specific Process Knowledge/Lithography/CSAR: Difference between revisions
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{| class="wikitable collapsible collapsed" style="border: 5px solid black;" style="width: 90%;" align="center" | {| class="wikitable collapsible collapsed" style="border: 5px solid black;" style="width: 90%;" align="center" | ||
! | !colspan="6"|Wafer 4.09, 50 nm exposed pattern, shot pitch 5 nm | ||
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| | ! 230 [muC/cm2] | ||
| [[File:53nmCSAR50nmOverviewBasedose.png|250px]] | |||
| [[File:53nmCSAR50nmLinesBasedose.png|250px]] | |||
| [[File:53nmCSAR50nmHolesBasedose.png|250px]] | |||
| [[File:53nmCSAR50nmPillarsBasedose.png|250px]] | |||
| [[File:53nmCSAR50nmTestBasedose.png|250px]] | |||
|} | |} | ||
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|-style="background:Black; color:White" | |-style="background:Black; color:White" | ||
!colspan="6"|Wafer 4.09, 50 nm exposed pattern, shot pitch 5 nm | !colspan="6"|Wafer 4.09, 50 nm exposed pattern, shot pitch 5 nm | ||
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