Specific Process Knowledge/Lithography/CSAR: Difference between revisions
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!colspan="3"|Wafer 4.09, 50 nm exposed pattern, shot pitch 5 nm | |||
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! 219 [muC/cm2] | |||
| [[File:53nmCSAR30nmOverviewBasedose-5%.png|250px]] | |||
| [[File: | | [[File:53nmCSAR30nmLinesBasedose-5%.png|250px]] | ||
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! 230 [muC/cm2] | |||
| [[File:53nmCSAR30nmOverviewBasedose.png|250px]] | |||
| [[File:53nmCSAR30nmLinesBasedose.png|250px]] | |||
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! 242 [muC/cm2] | |||
| [[File:53nmCSAR30nmOverviewBasedose+5%.png|250px]] | |||
| [[File:53nmCSAR30nmLinesBasedose+5%.png|250px]] | |||
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'''30nm''' | '''30nm''' | ||