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Specific Process Knowledge/Lithography/CSAR: Difference between revisions

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'''50nm'''
{|style="border: 5px solid black;" style="width: 90%;" align="center"
 
|-
{| cellpadding="2" style="border: 1px solid darkgray;" class="wikitable" style="width: 80%;"
|-
!  dose [muC/cm2]
|-style="background:Black; color:White"
! 230
!colspan="3"|Wafer 4.09, 50 nm exposed pattern, shot pitch 5 nm
! 230
|-
! 230
! 230
! 230
|-  
|-  
|
! 219 [muC/cm2]
| [[File:53nmCSAR50nmOverviewBasedose.png|250px]]
| [[File:53nmCSAR30nmOverviewBasedose-5%.png|250px]]
| [[File:53nmCSAR50nmLinesBasedose.png|250px]]
| [[File:53nmCSAR30nmLinesBasedose-5%.png|250px]]
| [[File:53nmCSAR50nmHolesBasedose.png|250px]]
|-
| [[File:53nmCSAR50nmPillarsBasedose.png|250px]]
| [[File:53nmCSAR50nmTestBasedose.png|250px]]
|-  
|-  
 
! 230 [muC/cm2]
 
| [[File:53nmCSAR30nmOverviewBasedose.png|250px]]
| [[File:53nmCSAR30nmLinesBasedose.png|250px]]
|-
|-
! 242 [muC/cm2]
| [[File:53nmCSAR30nmOverviewBasedose+5%.png|250px]]
| [[File:53nmCSAR30nmLinesBasedose+5%.png|250px]]
|-
|}
|}


'''30nm'''
'''30nm'''