Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions
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*TEOS:~265nm/min | *TEOS:~265nm/min | ||
*Stoichiometric Si3N4:~0.75nm/min (Morten Bo Mikkelsen, March 2013) | *Stoichiometric Si3N4:~0.75nm/min (Morten Bo Mikkelsen, March 2013) | ||
*Silicon rich SiN: 0.41nm/min (Eric Jensen and Rolf Møller-Nielsen @Nanotech, October 2013) | |||
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*Wet thermal oxide:~25nm/min | *Wet thermal oxide:~25nm/min | ||
*PECVD1 (standard):~87nm/min | *PECVD1 (standard):~87nm/min | ||
*TEOS:~153nm/min | *TEOS:~153nm/min | ||
*Silicon rich SiN: 0.6nm/min (Eric Jensen and Rolf Møller-Nielsen @Nanotech, October 2013) | |||
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*Boronfloat and quartz: ~3-4 μm/min | *Boronfloat and quartz: ~3-4 μm/min | ||
*Silicon rich SiN: 2.68nm/min in 30% HF (Eric Jensen and Rolf Møller-Nielsen @Nanotech, October 2013) | |||
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*A little higher etch rates than BHF | *A little higher etch rates than BHF | ||