Specific Process Knowledge/Etch/KOH Etch: Difference between revisions
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===Definition of structures=== | ===Definition of structures=== | ||
Due to the almost inert (111)-planes | Due to the almost inert (111)-planes..... | ||
<br clear="all" /> | <br clear="all" /> | ||
===Definition of <110> alignment structures=== | ===Definition of <110> alignment structures=== | ||
The etch rate dependence on the crystallographic planes can be used to determine the <110> crystal directions with high precision (better than +/- 0.05 <sup>o</sup>). A fast method for doing this, using the symmetric under-etching behaviour around but not at the <110>-directions, was described by Vangbo and Bäcklund in J. Micromech. Microeng.'''6''' (1996), 279-284. High-precision control of the <110>-direction during alignment can be necessary in order to control the dimensions of KOH-etched structures (e.g. precise control of V-groove dimensions). A dedicated mask (MASK NAME) has been designed for this purpose. | The etch rate dependence on the crystallographic planes can be used to determine the <110> crystal directions with high precision (better than +/- 0.05 <sup>o</sup>). A fast method for doing this, using the symmetric under-etching behaviour around but not at the <110>-directions, was described by Vangbo and Bäcklund in J. Micromech. Microeng.'''6''' (1996), 279-284. High-precision control of the <110>-direction during alignment can be necessary in order to control the dimensions of KOH-etched structures (e.g. precise control of V-groove dimensions). A dedicated mask (MASK NAME) has been designed for this purpose. | ||