Specific Process Knowledge/Wafer cleaning/RCA: Difference between revisions
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*DI water rinsing (dumping three times) | *DI water rinsing (dumping three times) | ||
*HF: 30 sec (you may avoid this step in case of a very thin oxide (0-200 Å) as the top layer) | *HF: 30 sec (you may avoid this step in case of a very thin oxide (0-200 Å) as the top layer) | ||
*DI water rinsing ( | *DI water rinsing (bubler) | ||
*RCA2: 10 min | *RCA2: 10 min | ||
*DI water rinsing (dumping three times) | *DI water rinsing (dumping three times) | ||
*Optional: HF: 30 sec (avoid it if you have a very thin oxide (0-200 Å) as the top layer) | *Optional: HF: 30 sec (avoid it if you have a very thin oxide (0-200 Å) as the top layer) | ||
*DI water rinsing ( | *DI water rinsing (bubler) | ||
For procedure details please look in the [http://labmanager.danchip.dtu.dk/d4Show.php?id=1633&mach=243 user manual] in LabManager. | For procedure details please look in the [http://labmanager.danchip.dtu.dk/d4Show.php?id=1633&mach=243 user manual] in LabManager. | ||