Specific Process Knowledge/Lithography/mrEBL6000: Difference between revisions

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Revision as of 14:32, 14 July 2014

Resist Polarity Manufacturer Comments Technical reports Spinner Developer Rinse Remover Process flows (in docx-format)
mr EBL 6000.1 Positive MicroResist Standard negative resist mrEBL6000 processing Guidelines.pdf‎ Manual Spinner 1 (Laurell), Spin Coater Labspin mr DEV IPA mr REM Process_Flow_mrEBL6000.docx‎


Process Flow

Test of mr EBL 6000.1; a negative e-beam resist from MicroResist.

Equipment Process Parameters Comments
Pretreatment
4" Si wafers 1 min @ 110 degC, hotplate
Spin Coat
Spin Coater Manual, LabSpin, A-5 mr EBL 6000.1 E-beam resist

60 sec at various spin speed. Acceleration 2000 s-2, softbake 3 min at 110 deg Celcius

Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice.
Characterization
Ellipsometer VASE B-1 9 points measured on 100 mm wafer ZEP program used; measured at 70 deg only
E-beam Exposure
JEOL 9500 E-beam writer, E-1 Dosepattern 15nm - 100nm,

dose 120-280 muC/cm2

Virtual chip mark height detection (CHIPAL V1) used in corner of every dose array
Development
Fumehood, D-3 60 sec in

60 sec rinse in IPA, N2 Blow dry

Gentle agitation while developing. After developing, wafer is immersed in beaker with IPA, subsequently blow dried with N2 gun.
Characterization
Zeiss SEM Supra 60VP, D-3 2-3 kV, shortest working distance possible, chip mounted with Al tape The wafers are diced into smaller pieces and sputter coated with Pt at DTU CEN before SEM inspection; please contact Ramona Valentina Mateiu for further information.

Spin Curve

The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.


MicroResist mr EBL 6000 spinning on Spin Coater: Manual LabSpin A-5, TIGRE, 14-07-2014. Softbake 3 min @ 110 degC.
Spin Speed [rpm] Acceleration [1/s2] Thickness [nm] St Dev
2000 2000 101.93 0.81
3000 2000 87.19 0.77
4000 2000 76.88 0.5
5000 2000 71.18 0.57
6000 2000 69.12 0.53