Specific Process Knowledge/Lithography/CSAR: Difference between revisions
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[[File:SpinCurveCSAR.jpg|right|600px]] | [[File:SpinCurveCSAR.jpg|right|600px]] | ||
The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers. | The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers. | ||
<span style="color:#4682B4">Dosepattern has been e-beam exposured and SEM inspected on those wafers marked by blue.</span> | |||
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== SEM pictures of dosepatterns == | == SEM pictures of dosepatterns == | ||