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Specific Process Knowledge/Lithography/CSAR: Difference between revisions

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!Comments
!Comments
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
|4" Si wafers
|Resist
|No Pretreatment
|AR-P 6200/2 AllResist E-beam resist
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
|Spin Coater Manual, LabSpin, A-5
|Spin Coat
|AR-P 6200/2 AllResist E-beam resist
|6000 rpm, 4000 1/s2, 60 sec, Softbake 1 min @ 150 degC
60 sec at various spin speed.
Acceleration 4000 s-2,  
softbake 1 - 5 min at 150 deg Celcius
|Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice. Softbake is not a crucial step, see e-mail correspondence with AllResist [[media:Softbake CSAR.pdf|here]].
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
|Ellipsometer VASE B-1
|E-beam exposure
|9 points measured on 100 mm wafer
|Dose 207-242 muC/cm2
|ZEP program used; measured at 70 deg only
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|JEOL 9500 E-beam writer, E-1
|Developing
|Dosepattern 15nm - 100nm,
|SX-AR 600-54/6 60 sec, 60 sec IPA rinse
dose 120-280 muC/cm2
|Virtual chip mark height detection (CHIPAL V1) used in corner of every dose array
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
|Fumehood, D-3
|Coated
|60 sec in X AR 600-54/6,
|2-3 nm Pt, sputtering
60 sec rinse in IPA,
N2 Blow dry
|Gentle agitation while developing. After developing, wafer is immersed in beaker with IPA, subsequently blow dried with N2 gun.
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|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
|Characterization
|Zeiss SEM Supra 60VP, D-3
|Zeiss SEM Supra 60VP, D-3
|2 kV, shortest working distance possible, chip mounted with Al tape
|Before characterization, wafers were sputter coated with 2-3 nm Pt at DTU CEN.
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