Specific Process Knowledge/Lithography/CSAR: Difference between revisions

Revision as of 10:39, 7 July 2014

These tests are currently in progress and this page thus under construction. If you have questions to the process or wish to use this e-beam resist, please contact Tine Greibe at tigre@danchip.dtu.dk.

Process Flow

Test of Chemically Semi-Amplified Resist (CSAR); a positive e-beam resist from AllResist (AR-P 6200-2).

Equipment	Process Parameters	Comments
Pretreatment
4" Si wafers	No Pretreatment
Spin Coat
Spin Coater Manual, LabSpin, A-5	AR-P 6200/2 AllResist E-beam resist 60 sec at various spin speed. Acceleration 4000 s-2, softbake 1 - 5 min at 150 deg Celcius	Disposal pipette used; clean by N2-gun before use. Use approximately 1.5 ml per 4" wafer, never use a pipette twice. Softbake is not a crucial step, see e-mail correspondence with AllResist here.
Characterization
Ellipsometer VASE B-1	9 points measured on 100 mm wafer	ZEP program used; measured at 70 deg only
E-beam Exposure
JEOL 9500 E-beam writer, E-1	Dosepattern 14nm - 100nm, dose 120-280 muC/cm2	Virtual chip mark height detection
Development
Fumehood, D-3	60 sec in X AR 600-54/6, 60 sec rinse in IPA, N2 Blow dry	Agitation (by hand) while developing
Characterization
Zeiss SEM Supra 60VP, D-3	2 kV, shortest working distance possible, chip mounted with Al tape	Before characterization, wafers were sputter coated with 2-3 nm Pt at DTU CEN.

Spin Curves

The thickness is measured on VASE Ellipsometer using a simple Cauchy model for a transparent polymer on Si. The measurements are performed at one incidence angle (70 degrees) only. 9 points on each 4" wafer has been measured; the standard deviation thus representing the homogeinity of the film on the 4" wafers.

AllResist AR-P 6200/2 spinning on Spin Coater: Manual LabSpin A-5, TIGRE, 09-04-2014. Softbake 5 min @ 150 degC.
Spin Speed [rpm]	Acceleration [1/s2]	Thickness [nm]	St Dev
2000	4000	225.98	0.97
3000	4000	194.00	0.6
4000	4000	169.57	0.32
5000	4000	151.47	0.26
6000	4000	142.38	0.41
7000	4000	126.59	0.36

AllResist CSAR on Spin Coater: Manual LabSpin A-5, TIGRE, 16-06-2014. Softbake 2 min @ 150 degC.
Spin Speed [rpm]	Acceleration [1/s2]	Thickness [nm]	St Dev
3000	4000	201.61	1.20
4000	4000	173.89	0.64
5000	4000	155.91	0.65

AllResist CSAR 1:1 in anisole, Spin Coater: Manual LabSpin A-5, TIGRE, 16-06-2014. Softbake 2 min @ 150 degC.
Spin Speed [rpm]	Acceleration [1/s2]	Thickness [nm]	St Dev
2000	4000	83.48	0.49
3000	4000	67.12	0.41
4000	4000	58.64	0.44
5000	4000	53.13	0.39
6000	4000	48.76	0.38

SEM pictures

50nm

dose [muC/cm2]	207	219	230	242

30nm

dose [muC/cm2]	207	219	230	242

@@ Line 278: / Line 278: @@
 == SEM pictures ==
-=== 50nm ===
+'''50nm'''
 {| cellpadding="2" style="border: 1px solid darkgray;" class="wikitable"
@@ Line 298: / Line 298: @@
 | [[File:CSAR50nmlines.png|250px]]
 | [[File:CSAR50nmlines+5%.png|250px]]
+|}
+'''30nm'''
+{| cellpadding="2" style="border: 1px solid darkgray;" class="wikitable"
+! width="100" | dose [muC/cm2]
+! width="250" | 207
+! width="250" | 219
+! width="250" | 230
+! width="250" | 242
+|-
+|
+| [[File:CSAR30nmoverview-10%.png|250px]]
+| [[File:CSAR30nmoverview-5%.png|250px]]
+| [[File:CSAR30nmoverview.png|250px]]
+| [[File:CSAR30nmoverview+5%.png|250px]]
+|-
+|
+| [[File:CSAR30nmlines-10%.png|250px]]
+| [[File:CSAR30nmlines-5%.png|250px]]
+| [[File:CSAR30nmlines.png|250px]]
+| [[File:CSAR30nmlines+5%.png|250px]]
 |}