Specific Process Knowledge/Doping: Difference between revisions
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*[[Specific Process Knowledge/Thermal Process/Dope with Boron|Dope with Boron]] - Doping Silicon wafers with boron by thermal predeposition and drive-in | *[[Specific Process Knowledge/Thermal Process/Dope with Boron|Dope with Boron]] - Doping Silicon wafers with boron by thermal predeposition and drive-in | ||
*[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus|Dope with Phosphorus]] - Doping Silicon wafers with phosphorus by thermal predeposition and drive-in | *[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus|Dope with Phosphorus]] - Doping Silicon wafers with phosphorus by thermal predeposition and drive-in | ||
*[[Specific Process Knowledge/Doping# | *[[Specific Process Knowledge/Doping#Ion implantation|Ion implantation]] | ||
Revision as of 09:07, 1 July 2014
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Doping your wafer
This page is about doping your wafer or making a thin film layer doped with boron, phosphor or Germane.
- PECVD - Making boron glass (BSG), phosphorus glass (PSG), boron-phosphorus glass PBSG or germanium doped glass
- Furnace LPCVD PolySilicon - Deposition of PolySi doped with B or P
- Dope with Boron - Doping Silicon wafers with boron by thermal predeposition and drive-in
- Dope with Phosphorus - Doping Silicon wafers with phosphorus by thermal predeposition and drive-in
- Ion implantation
Comparison method 1 and method 2 for the process
Method 1 | Method 2 | |
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Generel description | Generel description - method 1 | Generel description - method 2 |
Parameter 1 |
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Parameter 2 |
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Substrate size |
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Allowed materials |
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Ion implantation
Cannot be done at Danchip. We recommend ...