Specific Process Knowledge/Doping: Difference between revisions

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*[[Specific Process Knowledge/Thermal Process/Dope with Boron|Dope with Boron]] - Doping Silicon wafers with boron by thermal predeposition and drive-in
*[[Specific Process Knowledge/Thermal Process/Dope with Boron|Dope with Boron]] - Doping Silicon wafers with boron by thermal predeposition and drive-in
*[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus|Dope with Phosphorus]] - Doping Silicon wafers with phosphorus by thermal predeposition and drive-in
*[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus|Dope with Phosphorus]] - Doping Silicon wafers with phosphorus by thermal predeposition and drive-in
 
*[[Specific Process Knowledge/Doping#Ion_implantation|Ion implantation]]





Revision as of 09:06, 1 July 2014

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Doping your wafer

This page is about doping your wafer or making a thin film layer doped with boron, phosphor or Germane.



Comparison method 1 and method 2 for the process

Method 1 Method 2
Generel description Generel description - method 1 Generel description - method 2
Parameter 1
  • A
  • B
  • A
  • B
Parameter 2
  • A
  • B
  • C
  • A
Substrate size
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers
Allowed materials
  • Allowed material 1
  • Allowed material 2
  • Allowed material 1
  • Allowed material 2
  • Allowed material 3



Ion implantation

Cannot be done at Danchip. We recommend ...