Specific Process Knowledge/Doping: Difference between revisions
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This page is about doping your wafer or making a thin film layer doped with boron, phosphor or Germane. | This page is about doping your wafer or making a thin film layer doped with boron, phosphor or Germane. | ||
*[[/Deposition of silicon nitride using LPCVD|Process description using method 1]] | *[[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] - Making boron glass (BSG), phosphorus glass (PSG), boron-phosphorus glass PBSG or germanium doped glass | ||
[[/Deposition of silicon nitride using LPCVD|Process description using method 1]] | |||
<!-- Link to the process info page in LabAdviser --> | <!-- Link to the process info page in LabAdviser --> | ||
Revision as of 08:06, 1 July 2014
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Doping your wafer
This page is about doping your wafer or making a thin film layer doped with boron, phosphor or Germane.
- PECVD - Making boron glass (BSG), phosphorus glass (PSG), boron-phosphorus glass PBSG or germanium doped glass
Process description using method 1
Comparison method 1 and method 2 for the process
| Method 1 | Method 2 | |
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| Generel description | Generel description - method 1 | Generel description - method 2 |
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| Parameter 2 |
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| Substrate size |
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| Allowed materials |
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