Revision as of 07:35, 1 July 2014

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Drying Comparison Table

Equipment		Spin dryer 1	Spin dryer 2	Spin dryer 3	Spin dryer 4	Critical point dryer
Location		C-1	B-1	D-4	E-5	D-4
Purpose		Drying	Drying	Drying	Drying Rinsing + drying	Drying sensitive samples. E.g. with cantilevers
Substrates	Batch size	# 100 mm wafers	# 100 mm wafers	# 100 mm wafers # 150 mm wafers	# 50 mm wafers # 100 mm wafers # 150 mm wafers	1 to 5 wafers per run. Sizes: 2”, 4" or 6" Pieces (up to 10x10mm)
	Allowed materials	No restrictions	Only for RCA cleaned wafers	No restrictions	No restrictions	Si,SiO2, Si3N4 Quartz and Pyrex InAlP, GaAs SU8

@@ Line 79: / Line 79: @@
 *[[/Critical Point Dryer|Critical Point Dryer]]
 *[[/Spin Dryers|Spin Dryers]]
-== Process information ==
-Standard process is 120 seconds for 100mm wafers or 180 seconds for 150mm wafers, at 2000 RPM - drying only.
-''If'' rinsing is used as well, the standard process is 60 seconds of rinse at 500 RPM, followed by 120/180 seconds of drying at 2000 RPM.
-<br clear="all" />