Specific Process Knowledge: Difference between revisions
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Revision as of 12:48, 27 June 2014
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Overview of sample processing
Clean the sample |
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Drying Samples |
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Thermal treatment of the sample |
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Make a mask on the sample |
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Lithography |
Imprinting |
Transfer pattern into the sample |
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Wet etch |
Dry etch |
Lift-off |
Direct structure definition |
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Imprinting |
LASER machining |
Lithographic definition |
Polymer Injection molding |
Bonding samples together |
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Characterize the sample |
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Back end of the sample |
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Chip/die mounting |
Wire bonding |
Dicing |
Overview of sample processing 2
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Overview of sample processing 3
Entry page in LabAdviser | Techniques | Materials |
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Thermal Process/Oxidation | Thermal oxidation | Thermal SiO2 |
Thin film deposition | ||
Sputter deposition | Si,SiO2,Si3N3,TiO2, metals | |
Thermal evaporation | Al, ? | |
E-beam evaporation | Metals | |
LPCVD | Si3N4, SRN, SiO2, Si (poly and amorph) | |
PECVD | Si3N4, SiO2, PBSG | |
Electroplating | Ni | |
Lithography/Coaters | ||
Spin coating | resists, polymers | |
Spray coating | resists, polymers | |
Epitaxial growth | MOCVD | ? |
Entry page in LabAdviser | Techniques | Materials |
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Thin film deposition/PECVD | PECVD | Deposition of SiO2 or Si3N4 doped with P,B and Ge |
Thin film deposition/Furnace LPCVD PolySilicon | LPCVD | Deposition of PolySi doped with B or P |
Thermal Process/Dope with Boron | Predeposition and drive-in | Doping Silicon wafers with boron |
Thermal Process/Dope with Phosphorus | Predeposition and drive-in | Doping Silicon wafers with phosphorus |
Ionimplant | ? |
Entry page in LabAdviser | Techniques |
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Lithography | |
Photolithography | |
Deep UV lithography | |
E-beam lithography | |
Imprinting |
Entry page in LabAdviser | Techniques | Materials |
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Etch | ||
Wet etch | Si,Glass,SiO2,Si3N4,Al,Cr,Ti,Au,Pt,InP,InGaAsP,GaAs/AlGaAs | |
Dry etch | Any material | |
Lift-off | ? |
Imprinting |
LASER machining |
Lithographic definition |
Polymer Injection molding |
Chip/die mounting |
Wire bonding |
Dicing |