Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/RIE_(Reactive_Ion_Etch) click here]''' | '''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/RIE_(Reactive_Ion_Etch) click here]''' | ||
The JEOL JBX-9500 electron beam lithography system is a spot electron beam type lithography system designed for writing patterns with dimensions from nanometers to sub-micrometers. The minimum electron beam is around | The JEOL JBX-9500 electron beam lithography system is a spot electron beam type lithography system designed for writing patterns with dimensions from nanometers to sub-micrometers. The minimum electron beam is around 5 nm, the maximum writitng field without stitching is 1 mm x 1 mm. | ||
The machine is located in a class 10 cleanroom (E-2) with tight temperature and moisture control. The room must only be entered when the machines or equipment inside the room is intended to be used. | The machine is located in a class 10 cleanroom (E-2) with tight temperature and moisture control. The room must only be entered when the machines or equipment inside the room is intended to be used. | ||