Specific Process Knowledge/Thin film deposition/Lesker: Difference between revisions
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Contact the pvd-group if you have special needs (pvd@danchip.dtu.dk). | Contact the pvd-group if you have special needs (pvd@danchip.dtu.dk). | ||
====Sputter rate==== | ====Sputter rate==== | ||
The sputter rate depends on | |||
* target material | |||
* gun power (increasing power gives in general higher rate). Be aware of limitations on the power for different materials. | |||
* chamber pressure (increasing pressure gives in general lower rate). Too low a pressure can make the plasma unstable. | |||
* gas in chamber (Ar, N2, O2 or mixture). | |||
In the tabel below there a given a list of relative sputter rates for different materials (Al is set to 1). | |||
This means that You can estimate the sputter rate for a new material if you have the rate for another material under the same conditions. | |||
I think this only works for non-reactive sputtering (i.e. with Ar as the gas). | |||
==Overview of the performance of Sputter-System(Lesker) and some process related parameters== | ==Overview of the performance of Sputter-System(Lesker) and some process related parameters== | ||